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  ret y rt - built-in strain relief - ideal for automated placement - glass passivated junction - low inductance - typical ir less than 1 a above 11v - aec-q101 qualified (green compound not involved) - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test sy m bol u n i t p d watts p d watts p zsm watts t j o c t stg o c part n o. note 1: " xxxx" defi nes voltage from 7.5v (1SMA4737) to 200v (1sma200z) part n o. 1SMA47371SMA4737 document number: ds_d1309022 version: k13 green compound descri pt i on ex am ple 7,500 / 13" plastic reel 7,500 / 13" paper reel 1SMA4737 r3 r3 preferred p/n 7,500 / 13" plastic reel 7,500 / 13" paper reel 1SMA4737 thru 1sma200z surface mount silicon zener diodes feat u res - moisture sensitivity level : level 1, per j-std-020 1,800 / 7" plastic reel pack i n g - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec m ech an i cal dat a case: do-214ac (sma) do-214ac (sma) orderi n g i n form at i on storage temperature range - 55 to +150 60 - 55 to +150 1.25 pack i n g code green com pou n d code polarity: indicated by cathode band weight: 0.06 g (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) param et er f2 folded sma a f4 folded sma sma r2 sma m2 sma f3 folded sma suffix "g" 1,800 / 7" plastic reel 1SMA4737 r3g taiwan semiconductor pack i n g code green com pou n d code pack age non repetitive peak power dissipation(note 1) peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm v a lue 1 r3 operating junction temperature range 60 power dissipation, rthja<30k/w, t a =60 power dissipation, rthja<100k/w, t a =25 g note 1: non repetitive peak surge pd test condition: tp=100 s sq. pulse, t a =25 prior to surge 1smaxxxx (note 1) r3 downloaded from: http:///
vz@iz t i zt z zt @i zt i r vm a ?? ma av m a 1SMA4737 737a 7.5 34 4 700 0.50 5 5.0 605 1sma4738 738a 8.2 31 4.5 700 0.50 5 6.0 550 1sma4739 739a 9.1 28 5 700 0.50 5 7.0 500 1sma4740 740a 10 25 7 700 0.25 5 7.6 454 1sma4741 741a 11 23 8 700 0.25 1 8.4 414 1sma4742 742a 12 21 9 700 0.25 1 9.1 380 1sma4743 743a 13 19 10 700 0.25 1 9.9 344 1sma4744 744a 15 17 14 700 0.25 1 11.4 304 1sma4745 745a 16 15.5 16 700 0.25 1 12.2 285 1sma4746 746a 18 14.0 20 750 0.25 1 13.7 250 1sma4747 747a 20 12.5 22 750 0.25 1 15.2 225 1sma4748 748a 22 11.5 23 750 0.25 1 16.7 205 1sma4749 749a 24 10.5 25 750 0.25 1 18.2 190 1sma4750 750a 27 9.5 35 750 0.25 1 20.6 170 1sma4751 751a 30 8.5 40 1000 0.25 1 22.8 150 1sma4752 752a 33 7.5 45 1000 0.25 1 25.1 135 1sma4753 753a 36 7.0 50 1000 0.25 1 27.4 125 1sma4754 754a 39 6.5 60 1000 0.25 1 29.7 115 1sma4755 755a 43 6.0 70 1500 0.25 1 32.7 110 1sma4756 756a 47 5.5 80 1500 0.25 1 35.8 95 1sma4757 757a 51 5.0 95 1500 0.25 1 38.8 90 1sma4758 758a 56 4.5 110 2000 0.25 1 42.6 80 1sma4759 759a 62 4.0 125 2000 0.25 1 47.1 70 1sma4760 760a 68 3.7 150 2000 0.25 1 51.7 65 1sma4761 761a 75 3.3 175 2000 0.25 1 56.0 60 1sma4762 762a 82 3.0 200 3000 0.25 1 62.2 55 1sma4763 763a 91 2.8 250 3000 0.25 1 69.2 50 1sma4764 764a 100 2.5 350 3000 0.25 1 76.0 45 1sma110z 110a 110 2.3 450 4000 0.25 1 83.6 - 1sma120z 120a 120 2.0 550 4500 0.25 1 91.2 - 1sma130z 130a 130 1.9 700 5000 0.25 1 98.8 - 1sma150z 150a 150 1.7 1000 6000 0.25 1 114.0 - 1sma160z 160a 160 1.6 1100 6500 0.25 1 121.6 - 1sma180z 180a 180 1.4 1200 7000 0.25 1 136.8 - 1sma200z 200a 200 1.2 1500 8000 0.25 1 152.0 - notes: 1. tolerance and type number designation. the type numbers losted have a standard tolerance on the nominal zener voltage of 5% 2. specials available include: a. nominal zener voltages between the voltages shown and tighter voltage tolerances b. matched sets 3. zener voltage (vz) measurement. guarantees the zener voltage when messured at 90 seconds while maintaining the lead temperat ure(t l ) at 30 1 , from the diode body 4. zener impedance (zz) derivation. the zener impedance is derives from the 60 cycle ac voltage, which results when an accurren t having and rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk 5. surge current (i r ) non-repetitive. the rating listd in the electrical chatacte ristics table is maximum peak, non-repetitive, reverse surge curre nt of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, i zt per jedec registration; however, actual device capability is as described in figure 10. document number: ds_d1309022 version: k13 z zk @i zk surge current t a =25 leakage current i r @v r max. 1SMA4737 thru 1sma200z taiwan semiconductor rat i n gs an d ch aract eri st i cs cu rv es (ta=25 unless otherwise noted) device (note 1) zener impedance (note 2) (note 3) test current device marking code nominal zener voltage downloaded from: http:///
document number: ds_d1309022 version: k13 1SMA4737 thru 1sma200z taiwan semiconductor 0 0.25 0.5 0.75 1 1.25 1.5 0 25 50 75 100 125 150 p d , maximum power dissipation (watts) ambient temperature( ) fig. 1 power temperature derating curve 1 10 100 1000 11 01 0 0 zz, dynamic impedance ( ? ) iz, zener current(ma) fig.4 effect of zener voltage on zener impedance iz(rms)=0.1 iz(dc) f=1khz iz = 1ma 5 ma 20ma 1 10 100 1000 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 if, forward current (ma) v f , forward voltage (v) fig. 2 typical forward characteristics minimum maximum 70 150 25 0 1 10 100 1000 0 1 10 100 zz, dynamic impedance ( ? ) iz, zener current (ma) fig.3 effect of zener current on zener impedance iz(rms)=0.1 iz(dc) f=1khz 47v 27v 0.8v 0.001 0.01 0.1 1 10 100 1000 10000 34567891 01 11 21 31 41 5 ir, leakage current( a) vz, nominal zener voltage(v) fig.5 typical leakage current typical leakage current at 80% of nominal breakdown voltage 125 25 downloaded from: http:///
document number: ds_d1309022 version: k13 1SMA4737 thru 1sma200z taiwan semiconductor 10 100 1000 1 10 100 c, capacitance(pf) vz, forward voltage (v) fig.6 typical capacitance versus vz 50% of breakdown 0v bias 1.0v bias -4 -2 0 2 4 6 8 10 12 234567891 01 11 2 vz, temperature coefficient (mv/ ) vz, zener voltage(v) fig. 7 temperature coefficients a-range for units to 12 volts range vz@ izt 1 10 100 10 100 vz, temperature coefficient (mv/ ) vz, zener voltage(v) fig.8 temperature coefficients range vz@ izt b-range for units 12 to 100 volts -4 -2 0 2 4 6 33.544.555.566.577.58 vz, temperature coefficient (mv/ ) vz, zener voltage(v) fig. 9 effect of zener current note:below 3 voltage above a volts changes in zener current not affect temperature vz@ izt 0.01ma 1 ma 20ma 1 10 100 0.01 0.1 1 10 100 1000 p pk , peak surge power watts pw, pulse width (ms) fig.10 maximum surge power 20% duty cycle 11v-91v non-repetitive 10% duty cycle 5% duty cycle 0.8v-10v non-repetitive rectangular waveform ta=25 prior to initial pulse downloaded from: http:///
min max min max a 1.27 1.58 0.050 0.062 b 4.06 4.60 0.160 0.181 c 2.29 2.83 0.090 0.111 d 1.99 2.50 0.078 0.098 e 0.90 1.41 0.035 0.056 f 4.95 5.33 0.195 0.210 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 p/n = device marking code g = green compound yw = date code f = factory code document number: ds_d1309022 version: k13 unit (inch) 0.0660.060 0.155 0.095 0.215 d2 . 4 1 pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) su ggest ed pad lay ou t symbol unit (mm) ae5 . 4 5 m ark i n g di agram 1SMA4737 thru 1sma200z taiwan semiconductor 1.68 b1 . 5 2 c3 . 9 3 downloaded from: http:///
ret y rt assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1309022 version: k13 1SMA4737 thru 1sma200z taiwan semiconductor n ot ic e specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, downloaded from: http:///


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